'i c/ , u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 controlled rectifier 35a rms max., 500-1200 volts, 125 c max. junction temperature c137 the c137 series of silicon controlled rectifiers are reverse blocking triode thyristor semiconductor devices for use in medium power switching and phase control (50 to 400 hz) applications requiring blocking volt- ages up to 1200 volts, and overage load current (single-phase, 180 conduction angle) up to 23 amperes. special features of these scr's: ? no peak forward voltage limitation ? minimum dv/dt rating of 100 volts//isec. ? maximum di/dt rating of 150 amps/a?ec when switching from 600 volts ? high surge current capability for overcurrent protection. maximum allowable ratings type c137e c137m c137s c137n c137t C137P C137Pb repetitive peak off-state voltage, vdrm(1> (2) tc = -65cto +125c 500 volts 600 volts 700 volts 800 volts 900 volts 1000 volts 1200 volts repetitive peak reverse voltage vrrm(1)(2) tc = -65cto+125c 500 volts 600 volts 700 volts 800 volts 900 volts 1000 volts 1200 volts non-repetitive peak off-state and reverse voltage vdsmandvrsm(d (3) tc = -65cto+125c 600 volts 720 volts 840 volts 960 volts 1080 volts 1200 volts 1400 volts (1) values apply for gate terminal open-circuited, (negative gate bias is permissible.) (2) maximum case-to-ambient thermal resistance for which maximum vqrm and vrrm ratings apply equals s.ot per watt for full sine wave or full-wave rectified sinusoidal voltage waveform. (3.0^ per watt is maximum case-to-ambient thermal resistance for pure do voltage waveform.) (3) half sine wave voltage pulse, 10 millisecond maximum duration. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by n.i semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verity that datasheets are current before placing orders. quality semi-conductors
rms on-state current, it (rmsj .................................. 35 amperes (all conduction angles) average on-state current, it(av) ........................ depends on conduction angle (see charts 3 and 5) critical rate-of-rise of on-state current, di/dt: <4> gate triggered operation .................................................. (see chart 6) switching from 1001 volts min. to 1 200 volts max ......................... 75 amperes per microsecond 801 volts min. to 1000 volts max ........................ 100 amperes per microsecond 601 volts min. to 800 volts max ........................ 125 amperes per microsecond 600 volts max ................................... 1 50 amperes per microsecond breakover voltage triggered operation .................................. 10 amperes per microsecond peak one cycle surge (non-rep) on-state current, itsm .................................. 360 amperes '2t (for fusing), for time = 1 .0 milliseconds (see chart 9) ............................ 300 ampere 2 seconds for time = 8.3 milliseconds (see chart 9) ............................ 540 ampere^ seconds peak gate power dissipation, pgm .................................... 60 watts for 500 microseconds average gate power dissipation, pg(av) ............................................. 1.0 watts 1 eak negative gate voltage, vgm ......... . ....................................... 10 volts storage temperature, tstg ................................................. -65c to +150t "plating temperature, t, ................................................ -65c to + 125t maximum stud torque ..... ............................................ 30 lb-in (35 kg-cm) di/dt rating is established in accordance with e1a standards proposal no. 1101, section 5.2.2.6. off-state (blocking) voltage capability may be l mp1''lrily los* imriediately after each current pulse for duration less tlian the period of the applied pulse repetition rate. the pulse repetition rate tor this test is 60 hz. the duration of the jedec di/dt test condition is 300 pulses minimum at 60 hz. c137 i characteristics test peak off-state or reveise current (1) (2) c137e c137m c137s c137n c137t C137P C137Pb d.c. gate trigger current d.c. gate trigger voltage peak on-state voltage holding currer:! critical rate of rise of off-state voltage. (higher values may cause device switching.) thermal resistance circuii commutated turn-off time symbol 'drm or !rrm igt vgt vtm ih dv/dt r0jc (q min. - - - - - - - - - 0.25 - - - 190 - - max. 4.0 3.0 2.8 2.5 2.3 2.0 1.7 40 80 2,2 3.0 ... 2,3 100 200 - 1.0 _(3) units ma maclc vdc volts inadc volts/' /jsec c/watt msec test camditioitjs tc ~ -65t: to +1 25c ' ~~~ vdrfv1 = vrrm = 500 volts peal; 600 700 800 900 1000 1200 tc = 1-25t.', vd = 6 vdc, rl = ? 2 ohms tc = -65c, vd = 1 2 vdc, rl = 1 2 ohms ~ tc = +25c, vd = 6 vdc, rl = 12 ohms tc = -65c, vd = 12 vdc, r[_ = 12 ohms tc = +1 25c, rated vdrm, r, = 1000 ohms tc = -i-25c, !tm = "70 a peak, 1 msec v/idi ?*..,.-?.. ' duty cycle g 2%. anode supply = 24 vdc, gate supply = 10 v, 20 oh its. initial forward current pulse = 0.5 f\, 0.1 to 10.0 mjso ?.,ide. tc = +25"x: tc = -65^ tc = +125t:, rated vdrm, gats open ciivu: .ed. junction-io-case, dc tc = 125"c, itm = 10 a peak rect^ngula c'-vrsnt fu.jp, 50 ^!sec duration. di/dt < 10 amps per micvossjin d. commutation rate < 5 a per f^seo. prv = rated "''i-:^i\/i volts max. reverse voltage at end ol tvirn-oty tims !nten"i! = 15 volts. repetition rate = 60 pps. rate of rise of ?.;- applied off-state voltage (dv/dt) = loov/^lse:. o/t-staw voltage = rated vdrm volts. gate bias during t-rm-0 .t time interval = 0 volts, 1 00 ohms.
notes: (1) values apply for gate terminal open-circuited, (negative gate bias is permissible,) (2) maximum case-to-ambient thermal resistance for which maximum vdrm and vrrm ratings apply equals 5.of per >vau for full iine wav: full-wave rectified sinusoidal voltage waveform. (3.0c per watt is maximum case-to-ambient thermal resistance for pure dc voltage waviicci (3) turn-off time is not 100% factory tested. special selections are available upon request. consult factor)-. the test conditions shown re;;:^ standard factory test conditions for special selections. notes; 1. complete threads to extend within 2v2 threads of seating plane. diameter of unthreaded portion. 249" (6.32mm) maxi- mum, .220" (5.59mm) mini- mum. 1. angular orientation of these terminals is undefined, 3. '/4-2e unf-2a. maximum pitch diameter of plated threads shall be basic pitch diameter .2268" (5.76mm), minimum pitch diameter .2225" (5.66mm), reference: screw- thread standards for federal service 1957, handbook h28 1957, pi. 4. a chamfer (or undercut) on one or both ends of hexa- gonal portions is optional. 5. case is anode connection. 6. large terminal is cathode con- nection. 7. smoll terminal is gate connec- tion. 8. insulc'hng frii cav/silub!* upmi request. a. vi-28 stee! nut, ni. plated, .178 min. thk. b. ext. tooth lockwcsher, steel, ni. plated, .023 min. thk. outune (complies with jedec to-48) see symbo1 a <(>h 0b, 0d e f r-. j j, 1 0m n 0t 0t, w inches min. .330 .115 .210 .544 .113 .060 .120 .422 .060 .125 max. .505 .140 ,_ .300 .544 .562 .200 1.193 .875 .453 .075 .165 millimeter min. 8.3f, 2.92 5.33 13.s2 2.87 1.52 3.05 10.?;; 1.53 3.1e max. 12.83 ij07.ss ^ 3.53 2 '7.62 13.82 14.27 5.08 30.30 22.23 2 -t$ 1 4.1 ?|~" ...j _ i 3 j
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